型号:

PD20010-E

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:TRANS RF N-CH FET POWERSO-10RF
详细参数
数值
产品分类 分离式半导体产品 >> RF FET
PD20010-E PDF
其它有关文件 PD20010-E View All Specifications
标准包装 50
系列 -
晶体管类型 LDMOS
频率 2GHz
增益 11dB
电压 - 测试 13.6V
额定电流 5A
噪音数据 -
电流 - 测试 150mA
功率 - 输出 10W
电压 - 额定 40V
封装/外壳 PowerSO-10RF 裸露底部焊盘(2 条成形引线)
供应商设备封装 PowerSO-10RF(成形引线)
包装 管件
其它名称 497-13044-5
PD20010-E-ND
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